High Power Density Automotive Converters using SiC or GaN Power Devices English Free Réservé aux membres

  • Catégorie Article technique
  • Évènement lié International Congress : APE Automotive Power Electronics - 14 & 15 April 2015
  • Édition SIA
  • Date 14/04/2015
  • Auteur B. Eckardt - Fraunhofer IISB | T. Heckel - Friedrich-Alexander-University Erlangen-Nuremberg
  • Langue Anglais
  • Format Fichier PDF (639.32 Ko)
    (livraison exclusivement par téléchargement)
  • Nombre de pages 6
  • Code R-2015-05-15
  • Prix Gratuit

This paper presents the benefits in power density of automotive bidirectional DC/DC converters achieved by the use of state of the art wide bandgap semiconductor devices. In the past 10 years, the power density was increased by a factor of more than 20 for automotive DC/DC converters. In addition to comprehensive power converter system design, a power density of more than 100kW/dm³ can be obtained with SiC MOSFETs or GaN devices.