High Power Density Automotive Converters using SiC or GaN Power Devices English Free Members only

  • Category Technical paper
  • Related event International Congress : APE Automotive Power Electronics - 14 & 15 April 2015
  • Edition SIA
  • Date 04/14/2015
  • Author B. Eckardt - Fraunhofer IISB | T. Heckel - Friedrich-Alexander-University Erlangen-Nuremberg
  • Language English
  • Type PDF file (639.32 Ko)
    (Downloadable immediately on receipt of online payment)
  • Number of pages 6
  • Code R-2015-05-15
  • Fee Free

This paper presents the benefits in power density of automotive bidirectional DC/DC converters achieved by the use of state of the art wide bandgap semiconductor devices. In the past 10 years, the power density was increased by a factor of more than 20 for automotive DC/DC converters. In addition to comprehensive power converter system design, a power density of more than 100kW/dm³ can be obtained with SiC MOSFETs or GaN devices.