- Category Technical paper
- Related event International Congress : APE Automotive Power Electronics - 14 & 15 April 2015
- Edition SIA
- Date 04/14/2015
- Author B. Eckardt - Fraunhofer IISB | T. Heckel - Friedrich-Alexander-University Erlangen-Nuremberg
- Language English
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Type PDF file (639.32 Ko)
(Downloadable immediately on receipt of online payment) - Number of pages 6
- Code R-2015-05-15
- Fee Free
This paper presents the benefits in power density of automotive bidirectional DC/DC converters achieved by the use of state of the art wide bandgap semiconductor devices. In the past 10 years, the power density was increased by a factor of more than 20 for automotive DC/DC converters. In addition to comprehensive power converter system design, a power density of more than 100kW/dm³ can be obtained with SiC MOSFETs or GaN devices.