- Category Technical paper
- Related event International Congress : APE Automotive Power Electronics - 14 & 15 April 2015
- Edition SIA
- Date 04/14/2015
- Author G. Peyresoubes, S. Ogé - Thales Microelectronics
- Language English
Type PDF file (328 Ko)
(Downloadable immediately on receipt of online payment)
- Number of pages 10
- Code R-2015-05-35
- Fee from 8.00 € to 10.00 €
This paper presents the performances of SiC MOSFETs for high temperature applications. A complete static and dynamic electrical characterization of SiC MOSFETs dice has been performed under varying temperature from +25°C to +250°C using suitable packaging materials. The results allow evaluating the performances of a PWM three phased power inverter in high temperature environment. To go further, aging tests have been performed to evaluate lifetime of SiC MOSFET under power switching condition up to +300°C.
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