Understanding SiC Mosfet reliability issues under harsh environment switching conditions remains a challenge English

This paper presents the performances of SiC MOSFETs for high temperature applications. A complete static and dynamic electrical characterization of SiC MOSFETs dice has been performed under varying temperature from +25°C to +250°C using suitable packaging materials. The results allow evaluating the performances of a PWM three phased power inverter in high temperature environment. To go further, aging tests have been performed to evaluate lifetime of SiC MOSFET under power switching condition up to +300°C.


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