GaN on silicon: A way to low cost power devices English

  • Category Technical paper
  • Edition SIA
  • Date 04/03/2013
  • Author Jean-Jacques AUBERT, Matthew CHARLES, René ESCOFFIER, Erwan MORVAN, Alphonse TORRES - CEA/LETI/MINATEC
  • Language English
  • Type PDF file (1.06 Mo)
    (Downloadable immediately on receipt of online payment)
  • Number of pages 6
  • Code R-2013-01-31
  • Fee from 8.00 € to 10.00 €

Silicon based electronic components have always been widely used in power electronics, but the current development of alternative mobility options is pushing companies to prepare more efficient components to answer a growing market with new expectations in terms of performances and costs. Wide band gap materials have several characteristics that give them real advantages when compared with standard. Si technology, such as the capacity for higher temperature, frequency and voltage operation. Nevertheless, Si power devices are still very popular and Silicon Carbide (SiC) has not been able to replace it as a preferred material. Gallium Nitride (GaN) on Si seems to be a good option to popularize wide band gap component technology since it offers the possibility of large diameter low cost substrates and full compatibility with silicon technology. However, some of the physical properties of GaN require a specialized strategy in terms of power modules to most effectively benefit from the material. Despite this, GaN on Si technology will significantly reduce the cost of power electronics, enhance technical performance and allow consumers to access efficient products in line with European waste reduction targets in the coming years.


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