Wide Bandgap Semiconductors: A New Approach to Automotive Power Electronics English

  • Category Technical paper
  • Edition SIA
  • Date 04/03/2013
  • Author Filippo Di Giovanni - STMicroelectronics
  • Language English
  • Type PDF file (220.62 Ko)
    (Downloadable immediately on receipt of online payment)
  • Number of pages 7
  • Code R-2013-01-30
  • Fee from 8.00 € to 10.00 €

Wide bandgap semiconductors (WBG) have recently drawn a lot of interest as main switches for power conversion processes. Owing to their inherent properties, materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) offer some advantages over silicon, therefore representing a solution to the quest for increased power density, safer thermal operation, better efficiency and reduced system size. All these factors become essential in the harsh automotive ecosystem where they can significantly help contribute to reducing fuel consumption, mitigating cooling requirements and minimizing environment impact. In this paper we briefly list the main properties of WBG switches showing how they translate into advantages for the end-user. Also some applications are shown that attest to the remarkable opportunities these new materials offer to power electronics systems’ designers.



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