Silicon Carbide Devices for Higher Efficiency Electric Vehicle Applications English

  • Category Technical paper
  • Edition SIA
  • Date 04/03/2013
  • Author J.W. Palmour - Cree
  • Language English
  • Type PDF file (6.31 Mo)
    (Downloadable immediately on receipt of online payment)
  • Number of pages 6
  • Code R-2013-01-27
  • Fee from 8.00 € to 10.00 €

Silicon Carbide (SiC) power devices are now reaching the power levels required to enable highly efficient and compact motor drives, with SiC

Schottky diodes and MOSFETs now available in the 50 A range. SiC power modules in the 100 A range have been introduced, and 1200V, 880 A modules have successfully passed simulated testing of 11,783 miles on a road course. SiC based battery chargers are also receiving attention, with a high power density of 5627 W/L being demonstrated.



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